180N04 Transistor (Original)
රු276.00
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Description
- Manufacturer: RENESAS
- Type Designator: IPB180N04S4-01
- Marking Code: 4N0401
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 188W
- Maximum Drain-Source Voltage |Vds|: 40V
- Maximum Gate-Source Voltage |Vgs|: 20V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4V
- Maximum Drain Current |Id|: 180A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 135 nC
- Rise Time (tr): 24nS
- Drain-Source Capacitance (Cd): 2450pF
- Maximum Drain-Source On-State Resistance (Rds): 0.0013 Ohm
- Package: TO263-7
- Chinese Original
N-channel MOSFET
Data sheet:
Additional information
Weight | 0.001 kg |
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