Description

  • Manufacturer: RENESAS
  • Type Designator: IPB180N04S4-01
  • Marking Code: 4N0401
  • Type of Transistor: MOSFET
  • Type of Control Channel: N -Channel
  • Maximum Power Dissipation (Pd): 188W
  • Maximum Drain-Source Voltage |Vds|: 40V
  • Maximum Gate-Source Voltage |Vgs|: 20V
  • Maximum Gate-Threshold Voltage |Vgs(th)|: 4V
  • Maximum Drain Current |Id|: 180A
  • Maximum Junction Temperature (Tj): 175 °C
  • Total Gate Charge (Qg): 135 nC
  • Rise Time (tr): 24nS
  • Drain-Source Capacitance (Cd): 2450pF
  • Maximum Drain-Source On-State Resistance (Rds): 0.0013 Ohm
  • Package: TO263-7
  • Chinese Original

N-channel MOSFET

Data sheet:

https://www.google.com/url?sa=t&rct=j&q=&esrc=s&source=web&cd=1&ved=2ahUKEwjtgvXT7q3oAhVVeX0KHRoyDX0QFjAAegQIBhAB&url=https%3A%2F%2Fwww.renesas.com%2Fen-us%2Fdoc%2FDocumentServer%2F004%2FD18896EJ1V0DS00.pdf&usg=AOvVaw28N04IV0Da5ghFECunlvP6

Additional information

Weight0.001 kg

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